The preferred GaN FET test system for static and dynamic test capabilities with simultaneous realtime capture for leakage tests in parallel.
Wide Bandgap Category Leader
Patented test methodologies ensure GaN devices are tested optimally according to the chip design and detection of chip defects.
Dynamic Test
Soft and hard-switching Dynamic RDSON incorporated as part of core functionality for GaN tests.
Front-End Wafer Test
This test system supports connection to the substrate layer for wafer test enabling even more precise test and measurement.
Key Features
Maximum Voltage and Current Ratings:
±1000V/10A (DC Static) for 4 sites in parallel
High current DC up to 40A in serial
Dynamic RDSON (soft and hard-switching option)
Drain and Source pin simultaneous low leakage measurement of down to ±1nA range
Features a complete test system function tailored for wide bandgap devices, suitable for both wafer and final test semiconductor production.
All AccoTEST test systems include comprehensive and no licence-based UI interface with full support for debug tools, waveform generation, and database generation tools with analytics.
